Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STB18N60M2 |
| File Size | 856.99 KB |
| Total Pages | 27 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | STB18N60M2, STP18N60M2, STW18N60M2 |
| Description | MOSFET N-CH 600V D2PAK, MOSFET N-CH 600V TO-220, MOSFET N-CH 600V 13A TO-247 |
STB18N60M2 - STMicroelectronics
The Products You May Be Interested In
 |
STB18N60M2 | STMicroelectronics | MOSFET N-CH 600V D2PAK | 263 More on Order |
 |
STP18N60M2 | STMicroelectronics | MOSFET N-CH 600V TO-220 | 432 More on Order |
 |
STW18N60M2 | STMicroelectronics | MOSFET N-CH 600V 13A TO-247 | 427 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |