Top

STB13N60M2 Datasheet

STB13N60M2 Cover
DatasheetSTB13N60M2
File Size1,102.46 KB
Total Pages23
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STB13N60M2, STD13N60M2
Description MOSFET N-CH 600V 11A D2PAK, MOSFET N-CH 600V 11A DPAK

STB13N60M2 - STMicroelectronics

STB13N60M2 Datasheet Page 1
STB13N60M2 Datasheet Page 2
STB13N60M2 Datasheet Page 3
STB13N60M2 Datasheet Page 4
STB13N60M2 Datasheet Page 5
STB13N60M2 Datasheet Page 6
STB13N60M2 Datasheet Page 7
STB13N60M2 Datasheet Page 8
STB13N60M2 Datasheet Page 9
STB13N60M2 Datasheet Page 10
STB13N60M2 Datasheet Page 11
STB13N60M2 Datasheet Page 12
STB13N60M2 Datasheet Page 13
STB13N60M2 Datasheet Page 14
STB13N60M2 Datasheet Page 15
STB13N60M2 Datasheet Page 16
STB13N60M2 Datasheet Page 17
STB13N60M2 Datasheet Page 18
STB13N60M2 Datasheet Page 19
STB13N60M2 Datasheet Page 20
STB13N60M2 Datasheet Page 21
STB13N60M2 Datasheet Page 22
STB13N60M2 Datasheet Page 23

The Products You May Be Interested In

STB13N60M2 STB13N60M2 STMicroelectronics MOSFET N-CH 600V 11A D2PAK 254

More on Order

STD13N60M2 STD13N60M2 STMicroelectronics MOSFET N-CH 600V 11A DPAK 10991

More on Order

URL Link

STB13N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STD13N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63