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SSM6J206FE(TE85L Datasheet

SSM6J206FE(TE85L,F Cover
DatasheetSSM6J206FE(TE85L,F
File Size226.76 KB
Total Pages5
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SSM6J206FE(TE85L,F
Description MOSFET P-CH 20V 2A ES6

SSM6J206FE(TE85L,F - Toshiba Semiconductor and Storage

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SSM6J206FE(TE85L,F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4V

Rds On (Max) @ Id, Vgs

130mOhm @ 1A, 4V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

335pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ES6 (1.6x1.6)

Package / Case

SOT-563, SOT-666