Top

SQS850EN-T1_GE3 Datasheet

SQS850EN-T1_GE3 Cover
DatasheetSQS850EN-T1_GE3
File Size621.67 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQS850EN-T1_GE3
Description MOSFET N-CH 60V 12A POWERPAK1212

SQS850EN-T1_GE3 - Vishay Siliconix

SQS850EN-T1_GE3 Datasheet Page 1
SQS850EN-T1_GE3 Datasheet Page 2
SQS850EN-T1_GE3 Datasheet Page 3
SQS850EN-T1_GE3 Datasheet Page 4
SQS850EN-T1_GE3 Datasheet Page 5
SQS850EN-T1_GE3 Datasheet Page 6
SQS850EN-T1_GE3 Datasheet Page 7
SQS850EN-T1_GE3 Datasheet Page 8
SQS850EN-T1_GE3 Datasheet Page 9
SQS850EN-T1_GE3 Datasheet Page 10
SQS850EN-T1_GE3 Datasheet Page 11
SQS850EN-T1_GE3 Datasheet Page 12
SQS850EN-T1_GE3 Datasheet Page 13

The Products You May Be Interested In

SQS850EN-T1_GE3 SQS850EN-T1_GE3 Vishay Siliconix MOSFET N-CH 60V 12A POWERPAK1212 396

More on Order

URL Link

SQS850EN-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21.5mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2021pF @ 30V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8