Top

SQM90142E_GE3 Datasheet

SQM90142E_GE3 Cover
DatasheetSQM90142E_GE3
File Size172.66 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQM90142E_GE3
Description MOSFET N-CH 200V 95A TO263

SQM90142E_GE3 - Vishay Siliconix

SQM90142E_GE3 Datasheet Page 1
SQM90142E_GE3 Datasheet Page 2
SQM90142E_GE3 Datasheet Page 3
SQM90142E_GE3 Datasheet Page 4
SQM90142E_GE3 Datasheet Page 5
SQM90142E_GE3 Datasheet Page 6
SQM90142E_GE3 Datasheet Page 7

The Products You May Be Interested In

SQM90142E_GE3 SQM90142E_GE3 Vishay Siliconix MOSFET N-CH 200V 95A TO263 1957

More on Order

URL Link

SQM90142E_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB