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SQJQ910EL-T1_GE3 Datasheet

SQJQ910EL-T1_GE3 Cover
DatasheetSQJQ910EL-T1_GE3
File Size246.72 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJQ910EL-T1_GE3
Description MOSFET 2 N-CH 100V POWERPAK8X8

SQJQ910EL-T1_GE3 - Vishay Siliconix

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SQJQ910EL-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Rds On (Max) @ Id, Vgs

8.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2832pF @ 50V

Power - Max

187W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 8 x 8 Dual

Supplier Device Package

PowerPAK® 8 x 8 Dual