Top

SQJB60EP-T1_GE3 Datasheet

SQJB60EP-T1_GE3 Cover
DatasheetSQJB60EP-T1_GE3
File Size216.23 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJB60EP-T1_GE3
Description MOSFET 2 N-CH 60V POWERPAK SO8

SQJB60EP-T1_GE3 - Vishay Siliconix

SQJB60EP-T1_GE3 Datasheet Page 1
SQJB60EP-T1_GE3 Datasheet Page 2
SQJB60EP-T1_GE3 Datasheet Page 3
SQJB60EP-T1_GE3 Datasheet Page 4
SQJB60EP-T1_GE3 Datasheet Page 5
SQJB60EP-T1_GE3 Datasheet Page 6
SQJB60EP-T1_GE3 Datasheet Page 7

The Products You May Be Interested In

SQJB60EP-T1_GE3 SQJB60EP-T1_GE3 Vishay Siliconix MOSFET 2 N-CH 60V POWERPAK SO8 357

More on Order

URL Link

SQJB60EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

Power - Max

48W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual