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SQJ968EP-T1_GE3 Datasheet

SQJ968EP-T1_GE3 Cover
DatasheetSQJ968EP-T1_GE3
File Size191.44 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJ968EP-T1_GE3
Description MOSFET 2 N-CH 60V POWERPAK SO8

SQJ968EP-T1_GE3 - Vishay Siliconix

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SQJ968EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

23.5A (Tc)

Rds On (Max) @ Id, Vgs

33.6mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

714pF @ 30V

Power - Max

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TA)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual