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SQJ960EP-T1_GE3 Datasheet

SQJ960EP-T1_GE3 Cover
DatasheetSQJ960EP-T1_GE3
File Size228.43 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJ960EP-T1_GE3
Description MOSFET 2N-CH 60V 8A

SQJ960EP-T1_GE3 - Vishay Siliconix

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URL Link

SQJ960EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

36mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

735pF @ 25V

Power - Max

34W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual