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SQJ244EP-T1_GE3 Datasheet

SQJ244EP-T1_GE3 Cover
DatasheetSQJ244EP-T1_GE3
File Size374.5 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJ244EP-T1_GE3
Description MOSFET DUAL N-CHA 40V PPAK SO-8L

SQJ244EP-T1_GE3 - Vishay Siliconix

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SQJ244EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs

11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V, 45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V, 2800pF @ 25V

Power - Max

27W (Tc), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual Asymmetric