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SQA401EEJ-T1_GE3 Datasheet

SQA401EEJ-T1_GE3 Cover
DatasheetSQA401EEJ-T1_GE3
File Size274.28 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQA401EEJ-T1_GE3
Description MOSFET P-CHAN 20V POWERPAK SC-70

SQA401EEJ-T1_GE3 - Vishay Siliconix

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URL Link

SQA401EEJ-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

113mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.3nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

375pF @ 10V

FET Feature

-

Power Dissipation (Max)

13.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6