Top

SQ7414CENW-T1_GE3 Datasheet

SQ7414CENW-T1_GE3 Cover
DatasheetSQ7414CENW-T1_GE3
File Size229.33 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ7414CENW-T1_GE3
Description MOSFET N-CH 60V PPAK 1212-8

SQ7414CENW-T1_GE3 - Vishay Siliconix

SQ7414CENW-T1_GE3 Datasheet Page 1
SQ7414CENW-T1_GE3 Datasheet Page 2
SQ7414CENW-T1_GE3 Datasheet Page 3
SQ7414CENW-T1_GE3 Datasheet Page 4
SQ7414CENW-T1_GE3 Datasheet Page 5
SQ7414CENW-T1_GE3 Datasheet Page 6
SQ7414CENW-T1_GE3 Datasheet Page 7
SQ7414CENW-T1_GE3 Datasheet Page 8
SQ7414CENW-T1_GE3 Datasheet Page 9

The Products You May Be Interested In

SQ7414CENW-T1_GE3 SQ7414CENW-T1_GE3 Vishay Siliconix MOSFET N-CH 60V PPAK 1212-8 4282

More on Order

URL Link

SQ7414CENW-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1590pF @ 30V

FET Feature

-

Power Dissipation (Max)

62W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8W

Package / Case

PowerPAK® 1212-8W