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SQ3585EV-T1_GE3 Datasheet

SQ3585EV-T1_GE3 Cover
DatasheetSQ3585EV-T1_GE3
File Size263.16 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ3585EV-T1_GE3
Description MOSFET N/P-CH 20V 6TSOP

SQ3585EV-T1_GE3 - Vishay Siliconix

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URL Link

SQ3585EV-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.57A (Tc), 2.5A (Tc)

Rds On (Max) @ Id, Vgs

77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.5nC @ 4.5V, 3.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.67W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP