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SQ3418AEEV-T1_GE3 Datasheet

SQ3418AEEV-T1_GE3 Cover
DatasheetSQ3418AEEV-T1_GE3
File Size84.87 KB
Total Pages2
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ3418AEEV-T1_GE3
Description MOSFET N-CHANNEL 30V 7.8A 6TSOP

SQ3418AEEV-T1_GE3 - Vishay Siliconix

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SQ3418AEEV-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 15V

FET Feature

-

Power Dissipation (Max)

4W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6