Top

SPP80N06S2-07 Datasheet

SPP80N06S2-07 Cover
DatasheetSPP80N06S2-07
File Size419.02 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts SPP80N06S2-07, SPI80N06S2-07, SPB80N06S2-07
Description MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A I2PAK, MOSFET N-CH 55V 80A D2PAK

SPP80N06S2-07 - Infineon Technologies

SPP80N06S2-07 Datasheet Page 1
SPP80N06S2-07 Datasheet Page 2
SPP80N06S2-07 Datasheet Page 3
SPP80N06S2-07 Datasheet Page 4
SPP80N06S2-07 Datasheet Page 5
SPP80N06S2-07 Datasheet Page 6
SPP80N06S2-07 Datasheet Page 7
SPP80N06S2-07 Datasheet Page 8

The Products You May Be Interested In

SPP80N06S2-07 SPP80N06S2-07 Infineon Technologies MOSFET N-CH 55V 80A TO-220 253

More on Order

SPI80N06S2-07 SPI80N06S2-07 Infineon Technologies MOSFET N-CH 55V 80A I2PAK 235

More on Order

SPB80N06S2-07 SPB80N06S2-07 Infineon Technologies MOSFET N-CH 55V 80A D2PAK 613

More on Order

URL Link

SPP80N06S2-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4540pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPI80N06S2-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4540pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPB80N06S2-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4540pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB