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| Datasheet | SPP80N06S08AKSA1 |
| File Size | 205.97 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SPP80N06S08AKSA1, SPI80N06S-08 |
| Description | MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A I2PAK |
SPP80N06S08AKSA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |