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SPP77N06S2-12 Datasheet

SPP77N06S2-12 Cover
DatasheetSPP77N06S2-12
File Size311.36 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts SPP77N06S2-12, SPB77N06S2-12
Description MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A D2PAK

SPP77N06S2-12 - Infineon Technologies

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URL Link

SPP77N06S2-12

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2350pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPB77N06S2-12

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2350pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB