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SPP12N50C3XKSA1 Datasheet

SPP12N50C3XKSA1 Cover
DatasheetSPP12N50C3XKSA1
File Size639.26 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 5 part numbers
Associated Parts SPP12N50C3XKSA1, SPI12N50C3HKSA1, SPI12N50C3XKSA1, SPP12N50C3HKSA1, SPA12N50C3XKSA1
Description LOW POWER_LEGACY, MOSFET N-CH 500V 11.6A TO-262, MOSFET N-CH 560V 11.6A TO-262, MOSFET N-CH 560V 11.6A TO-220, MOSFET N-CH 560V 11.6A TO220FP

SPP12N50C3XKSA1 - Infineon Technologies

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URL Link

SPP12N50C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SPI12N50C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPI12N50C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPP12N50C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPA12N50C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack