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SPP10N10 Datasheet

SPP10N10 Cover
DatasheetSPP10N10
File Size376.46 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts SPP10N10, SPI10N10
Description MOSFET N-CH 100V 10.3A TO-220, MOSFET N-CH 100V 10.3A I2PAK

SPP10N10 - Infineon Technologies

SPP10N10 Datasheet Page 1
SPP10N10 Datasheet Page 2
SPP10N10 Datasheet Page 3
SPP10N10 Datasheet Page 4

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URL Link

SPP10N10

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

426pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPI10N10

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

426pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA