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SPI11N60C3HKSA1 Datasheet

SPI11N60C3HKSA1 Cover
DatasheetSPI11N60C3HKSA1
File Size654.01 KB
Total Pages16
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts SPI11N60C3HKSA1, SPA11N60C3XKSA1
Description MOSFET N-CH 600V 11A TO-262, MOSFET N-CH 600V 11A TO220-3

SPI11N60C3HKSA1 - Infineon Technologies

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URL Link

SPI11N60C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPA11N60C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-31 Full Pack

Package / Case

TO-220-3 Full Pack