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SPD30N06S2L-13 Datasheet

SPD30N06S2L-13 Cover
DatasheetSPD30N06S2L-13
File Size264.83 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SPD30N06S2L-13
Description MOSFET N-CH 55V 30A DPAK

SPD30N06S2L-13 - Infineon Technologies

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URL Link

SPD30N06S2L-13

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

P-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63