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SPB80P06P Datasheet

SPB80P06P Cover
DatasheetSPB80P06P
File Size96.2 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts SPB80P06P, SPP80P06PBKSA1
Description MOSFET P-CH 60V 80A D2PAK, MOSFET P-CH 60V 80A TO-220AB

SPB80P06P - Infineon Technologies

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URL Link

SPB80P06P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 64A, 10V

Vgs(th) (Max) @ Id

4V @ 5.5mA

Gate Charge (Qg) (Max) @ Vgs

173nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5033pF @ 25V

FET Feature

-

Power Dissipation (Max)

340W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPP80P06PBKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 64A, 10V

Vgs(th) (Max) @ Id

4V @ 5.5mA

Gate Charge (Qg) (Max) @ Vgs

173nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5033pF @ 25V

FET Feature

-

Power Dissipation (Max)

340W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3