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SP8K31TB1 Datasheet

SP8K31TB1 Cover
DatasheetSP8K31TB1
File Size99.1 KB
Total Pages5
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SP8K31TB1
Description MOSFET 2N-CH 60V 3.5A 8SOIC

SP8K31TB1 - Rohm Semiconductor

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SP8K31TB1 SP8K31TB1 Rohm Semiconductor MOSFET 2N-CH 60V 3.5A 8SOIC 594

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URL Link

SP8K31TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.5A

Rds On (Max) @ Id, Vgs

120mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP