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SIZF300DT-T1-GE3 Datasheet

SIZF300DT-T1-GE3 Cover
DatasheetSIZF300DT-T1-GE3
File Size259.26 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZF300DT-T1-GE3
Description MOSFET DUAL N-CHAN 30V PPAIR 3X3

SIZF300DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZF300DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)

Rds On (Max) @ Id, Vgs

4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V, 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V, 3150pF @ 15V

Power - Max

3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (6x5)