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SIZ910DT-T1-GE3 Datasheet

SIZ910DT-T1-GE3 Cover
DatasheetSIZ910DT-T1-GE3
File Size210.69 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ910DT-T1-GE3
Description MOSFET 2N-CH 30V 40A POWERPAIR

SIZ910DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZ910DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A

Rds On (Max) @ Id, Vgs

5.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 15V

Power - Max

48W, 100W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (6x5)