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SIZ904DT-T1-GE3 Datasheet

SIZ904DT-T1-GE3 Cover
DatasheetSIZ904DT-T1-GE3
File Size231.11 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ904DT-T1-GE3
Description MOSFET 2N-CH 30V 12A POWERPAIR

SIZ904DT-T1-GE3 - Vishay Siliconix

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SIZ904DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A, 16A

Rds On (Max) @ Id, Vgs

24mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

435pF @ 15V

Power - Max

20W, 33W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-PowerPair™

Supplier Device Package

6-PowerPair™