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SIZ322DT-T1-GE3 Datasheet

SIZ322DT-T1-GE3 Cover
DatasheetSIZ322DT-T1-GE3
File Size334.54 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ322DT-T1-GE3
Description MOSFET 2 N-CH 25V 30A 8-POWER33

SIZ322DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZ322DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Rds On (Max) @ Id, Vgs

6.35mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 12.5V

Power - Max

16.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-Power33 (3x3)