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SIUD402ED-T1-GE3 Datasheet

SIUD402ED-T1-GE3 Cover
DatasheetSIUD402ED-T1-GE3
File Size212.02 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIUD402ED-T1-GE3
Description MOSFET N-CH 20V 1A POWERPAK0806

SIUD402ED-T1-GE3 - Vishay Siliconix

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URL Link

SIUD402ED-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

730mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

16pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 0806

Package / Case

PowerPAK® 0806