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SISS70DN-T1-GE3 Datasheet

SISS70DN-T1-GE3 Cover
DatasheetSISS70DN-T1-GE3
File Size252.8 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SISS70DN-T1-GE3
Description MOSFET N-CH 125V

SISS70DN-T1-GE3 - Vishay Siliconix

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URL Link

SISS70DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

125V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

29.8mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

535pF @ 62.5V

FET Feature

-

Power Dissipation (Max)

5.1W (Ta), 65.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S