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SISS26LDN-T1-GE3 Datasheet

SISS26LDN-T1-GE3 Cover
DatasheetSISS26LDN-T1-GE3
File Size263.01 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SISS26LDN-T1-GE3
Description MOSFET N-CH 60V 81.2A PP 1212-8S

SISS26LDN-T1-GE3 - Vishay Siliconix

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URL Link

SISS26LDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

23.7A (Ta), 81.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1980pF @ 30V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S