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SISS23DN-T1-GE3 Datasheet

SISS23DN-T1-GE3 Cover
DatasheetSISS23DN-T1-GE3
File Size266.35 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SISS23DN-T1-GE3
Description MOSFET P-CH 20V 50A PPAK 1212-8S

SISS23DN-T1-GE3 - Vishay Siliconix

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SISS23DN-T1-GE3 SISS23DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 50A PPAK 1212-8S 274

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URL Link

SISS23DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

8840pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S