Top

SISHA10DN-T1-GE3 Datasheet

SISHA10DN-T1-GE3 Cover
DatasheetSISHA10DN-T1-GE3
File Size228.79 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SISHA10DN-T1-GE3
Description MOSFET N-CH 30V PP 1212-8

SISHA10DN-T1-GE3 - Vishay Siliconix

SISHA10DN-T1-GE3 Datasheet Page 1
SISHA10DN-T1-GE3 Datasheet Page 2
SISHA10DN-T1-GE3 Datasheet Page 3
SISHA10DN-T1-GE3 Datasheet Page 4
SISHA10DN-T1-GE3 Datasheet Page 5
SISHA10DN-T1-GE3 Datasheet Page 6
SISHA10DN-T1-GE3 Datasheet Page 7
SISHA10DN-T1-GE3 Datasheet Page 8
SISHA10DN-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SISHA10DN-T1-GE3 SISHA10DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PP 1212-8 534

More on Order

URL Link

SISHA10DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

2425pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8SH

Package / Case

PowerPAK® 1212-8SH