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SIS932EDN-T1-GE3 Datasheet

SIS932EDN-T1-GE3 Cover
DatasheetSIS932EDN-T1-GE3
File Size257.2 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS932EDN-T1-GE3
Description MOSFET N-CH DL 30V PWRPAK 1212-8

SIS932EDN-T1-GE3 - Vishay Siliconix

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SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix MOSFET N-CH DL 30V PWRPAK 1212-8 12776

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URL Link

SIS932EDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Rds On (Max) @ Id, Vgs

22mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

Power - Max

2.6W (Ta), 23W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual