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SIS903DN-T1-GE3 Datasheet

SIS903DN-T1-GE3 Cover
DatasheetSIS903DN-T1-GE3
File Size243.48 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS903DN-T1-GE3
Description MOSFET DUAL P-CHAN POWERPAK 1212

SIS903DN-T1-GE3 - Vishay Siliconix

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URL Link

SIS903DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen III

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Rds On (Max) @ Id, Vgs

20.1mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2565pF @ 10V

Power - Max

2.6W (Ta), 23W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual