Top

SIS892DN-T1-GE3 Datasheet

SIS892DN-T1-GE3 Cover
DatasheetSIS892DN-T1-GE3
File Size556.81 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS892DN-T1-GE3
Description MOSFET N-CH 100V 30A 1212-8 PPAK

SIS892DN-T1-GE3 - Vishay Siliconix

SIS892DN-T1-GE3 Datasheet Page 1
SIS892DN-T1-GE3 Datasheet Page 2
SIS892DN-T1-GE3 Datasheet Page 3
SIS892DN-T1-GE3 Datasheet Page 4
SIS892DN-T1-GE3 Datasheet Page 5
SIS892DN-T1-GE3 Datasheet Page 6
SIS892DN-T1-GE3 Datasheet Page 7
SIS892DN-T1-GE3 Datasheet Page 8
SIS892DN-T1-GE3 Datasheet Page 9
SIS892DN-T1-GE3 Datasheet Page 10
SIS892DN-T1-GE3 Datasheet Page 11
SIS892DN-T1-GE3 Datasheet Page 12
SIS892DN-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SIS892DN-T1-GE3 SIS892DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A 1212-8 PPAK 459

More on Order

URL Link

SIS892DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

29mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

611pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8