Top

SIS626DN-T1-GE3 Datasheet

SIS626DN-T1-GE3 Cover
DatasheetSIS626DN-T1-GE3
File Size615.59 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS626DN-T1-GE3
Description MOSFET N-CH 25V 16A POWERPAK1212

SIS626DN-T1-GE3 - Vishay Siliconix

SIS626DN-T1-GE3 Datasheet Page 1
SIS626DN-T1-GE3 Datasheet Page 2
SIS626DN-T1-GE3 Datasheet Page 3
SIS626DN-T1-GE3 Datasheet Page 4
SIS626DN-T1-GE3 Datasheet Page 5
SIS626DN-T1-GE3 Datasheet Page 6
SIS626DN-T1-GE3 Datasheet Page 7
SIS626DN-T1-GE3 Datasheet Page 8
SIS626DN-T1-GE3 Datasheet Page 9
SIS626DN-T1-GE3 Datasheet Page 10
SIS626DN-T1-GE3 Datasheet Page 11
SIS626DN-T1-GE3 Datasheet Page 12
SIS626DN-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SIS626DN-T1-GE3 SIS626DN-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 16A POWERPAK1212 152

More on Order

URL Link

SIS626DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1925pF @ 15V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8