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SIS414DN-T1-GE3 Datasheet

SIS414DN-T1-GE3 Cover
DatasheetSIS414DN-T1-GE3
File Size578.03 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS414DN-T1-GE3
Description MOSFET N-CH 30V 20A 1212-8 PPAK

SIS414DN-T1-GE3 - Vishay Siliconix

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URL Link

SIS414DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

16mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

795pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.4W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8