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SIS110DN-T1-GE3 Datasheet

SIS110DN-T1-GE3 Cover
DatasheetSIS110DN-T1-GE3
File Size241.61 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS110DN-T1-GE3
Description MOSFET N-CHAN 100V POWERPAK 1212

SIS110DN-T1-GE3 - Vishay Siliconix

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URL Link

SIS110DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta), 14.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

54mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 24W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8