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SIRB40DP-T1-GE3 Datasheet

SIRB40DP-T1-GE3 Cover
DatasheetSIRB40DP-T1-GE3
File Size352.23 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIRB40DP-T1-GE3
Description MOSFET 2 N-CH 40V POWERPAK SO8

SIRB40DP-T1-GE3 - Vishay Siliconix

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URL Link

SIRB40DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Rds On (Max) @ Id, Vgs

3.25mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

4290pF @ 20V

Power - Max

46.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual