Top

SIRA52DP-T1-GE3 Datasheet

SIRA52DP-T1-GE3 Cover
DatasheetSIRA52DP-T1-GE3
File Size402.12 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIRA52DP-T1-GE3
Description MOSFET N-CH 40V 60A PPAK SO-8

SIRA52DP-T1-GE3 - Vishay Siliconix

SIRA52DP-T1-GE3 Datasheet Page 1
SIRA52DP-T1-GE3 Datasheet Page 2
SIRA52DP-T1-GE3 Datasheet Page 3
SIRA52DP-T1-GE3 Datasheet Page 4
SIRA52DP-T1-GE3 Datasheet Page 5
SIRA52DP-T1-GE3 Datasheet Page 6
SIRA52DP-T1-GE3 Datasheet Page 7
SIRA52DP-T1-GE3 Datasheet Page 8
SIRA52DP-T1-GE3 Datasheet Page 9
SIRA52DP-T1-GE3 Datasheet Page 10
SIRA52DP-T1-GE3 Datasheet Page 11
SIRA52DP-T1-GE3 Datasheet Page 12
SIRA52DP-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SIRA52DP-T1-GE3 SIRA52DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 485

More on Order

URL Link

SIRA52DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

7150pF @ 20V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8