Top

SIR878BDP-T1-RE3 Datasheet

SIR878BDP-T1-RE3 Cover
DatasheetSIR878BDP-T1-RE3
File Size387.68 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR878BDP-T1-RE3
Description MOSFET N-CHAN 100V POWERPAK SO-8

SIR878BDP-T1-RE3 - Vishay Siliconix

SIR878BDP-T1-RE3 Datasheet Page 1
SIR878BDP-T1-RE3 Datasheet Page 2
SIR878BDP-T1-RE3 Datasheet Page 3
SIR878BDP-T1-RE3 Datasheet Page 4
SIR878BDP-T1-RE3 Datasheet Page 5
SIR878BDP-T1-RE3 Datasheet Page 6
SIR878BDP-T1-RE3 Datasheet Page 7
SIR878BDP-T1-RE3 Datasheet Page 8
SIR878BDP-T1-RE3 Datasheet Page 9
SIR878BDP-T1-RE3 Datasheet Page 10
SIR878BDP-T1-RE3 Datasheet Page 11
SIR878BDP-T1-RE3 Datasheet Page 12
SIR878BDP-T1-RE3 Datasheet Page 13

The Products You May Be Interested In

SIR878BDP-T1-RE3 SIR878BDP-T1-RE3 Vishay Siliconix MOSFET N-CHAN 100V POWERPAK SO-8 4333

More on Order

URL Link

SIR878BDP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 42.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

14.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8