Top

SIR800ADP-T1-RE3 Datasheet

SIR800ADP-T1-RE3 Cover
DatasheetSIR800ADP-T1-RE3
File Size231.75 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIR800ADP-T1-RE3, SIR800ADP-T1-GE3
Description MOSFET N-CH 20V POWERPAK SO8 SNG, MOSFET N-CH 20V PPAK SO-8

SIR800ADP-T1-RE3 - Vishay Siliconix

SIR800ADP-T1-RE3 Datasheet Page 1
SIR800ADP-T1-RE3 Datasheet Page 2
SIR800ADP-T1-RE3 Datasheet Page 3
SIR800ADP-T1-RE3 Datasheet Page 4
SIR800ADP-T1-RE3 Datasheet Page 5
SIR800ADP-T1-RE3 Datasheet Page 6
SIR800ADP-T1-RE3 Datasheet Page 7
SIR800ADP-T1-RE3 Datasheet Page 8
SIR800ADP-T1-RE3 Datasheet Page 9

The Products You May Be Interested In

SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 Vishay Siliconix MOSFET N-CH 20V POWERPAK SO8 SNG 311

More on Order

SIR800ADP-T1-GE3 SIR800ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V PPAK SO-8 332

More on Order

URL Link

SIR800ADP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50.2A (Ta), 177A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

1.35mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

+12V, -8V

Input Capacitance (Ciss) (Max) @ Vds

3415pF @ 10V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SIR800ADP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50.2A (Ta), 177A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

1.35mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

+12V, -8V

Input Capacitance (Ciss) (Max) @ Vds

3415pF @ 10V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8