Top

SIR638ADP-T1-RE3 Datasheet

SIR638ADP-T1-RE3 Cover
DatasheetSIR638ADP-T1-RE3
File Size400.12 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR638ADP-T1-RE3
Description MOSFET N-CH 40V 100A POWERPAKSO

SIR638ADP-T1-RE3 - Vishay Siliconix

SIR638ADP-T1-RE3 Datasheet Page 1
SIR638ADP-T1-RE3 Datasheet Page 2
SIR638ADP-T1-RE3 Datasheet Page 3
SIR638ADP-T1-RE3 Datasheet Page 4
SIR638ADP-T1-RE3 Datasheet Page 5
SIR638ADP-T1-RE3 Datasheet Page 6
SIR638ADP-T1-RE3 Datasheet Page 7
SIR638ADP-T1-RE3 Datasheet Page 8
SIR638ADP-T1-RE3 Datasheet Page 9
SIR638ADP-T1-RE3 Datasheet Page 10
SIR638ADP-T1-RE3 Datasheet Page 11
SIR638ADP-T1-RE3 Datasheet Page 12
SIR638ADP-T1-RE3 Datasheet Page 13

The Products You May Be Interested In

SIR638ADP-T1-RE3 SIR638ADP-T1-RE3 Vishay Siliconix MOSFET N-CH 40V 100A POWERPAKSO 4110

More on Order

URL Link

SIR638ADP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

9100pF @ 100V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8