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SIR492DP-T1-GE3 Datasheet

SIR492DP-T1-GE3 Cover
DatasheetSIR492DP-T1-GE3
File Size311.02 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR492DP-T1-GE3
Description MOSFET N-CH 12V 40A PPAK SO-8

SIR492DP-T1-GE3 - Vishay Siliconix

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URL Link

SIR492DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 6V

FET Feature

-

Power Dissipation (Max)

4.2W (Ta), 36W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8