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| Datasheet | SIR410DP-T1-GE3 |
| File Size | 370.69 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIR410DP-T1-GE3 |
| Description | MOSFET N-CH 20V 35A PPAK SO-8 |
SIR410DP-T1-GE3 - Vishay Siliconix
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SIR410DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | 26894 More on Order |
URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V FET Feature - Power Dissipation (Max) 4.2W (Ta), 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |