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SIR180DP-T1-RE3 Datasheet

SIR180DP-T1-RE3 Cover
DatasheetSIR180DP-T1-RE3
File Size381.66 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR180DP-T1-RE3
Description MOSFET N-CHAN 60V POWERPAK SO-8

SIR180DP-T1-RE3 - Vishay Siliconix

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URL Link

SIR180DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

32.4A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

2.05mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4030pF @ 30V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 83.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8