Top

SIR108DP-T1-RE3 Datasheet

SIR108DP-T1-RE3 Cover
DatasheetSIR108DP-T1-RE3
File Size380.43 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR108DP-T1-RE3
Description MOSFET N-CHAN 100V POWERPAK SO-8

SIR108DP-T1-RE3 - Vishay Siliconix

SIR108DP-T1-RE3 Datasheet Page 1
SIR108DP-T1-RE3 Datasheet Page 2
SIR108DP-T1-RE3 Datasheet Page 3
SIR108DP-T1-RE3 Datasheet Page 4
SIR108DP-T1-RE3 Datasheet Page 5
SIR108DP-T1-RE3 Datasheet Page 6
SIR108DP-T1-RE3 Datasheet Page 7
SIR108DP-T1-RE3 Datasheet Page 8
SIR108DP-T1-RE3 Datasheet Page 9
SIR108DP-T1-RE3 Datasheet Page 10
SIR108DP-T1-RE3 Datasheet Page 11
SIR108DP-T1-RE3 Datasheet Page 12
SIR108DP-T1-RE3 Datasheet Page 13

The Products You May Be Interested In

SIR108DP-T1-RE3 SIR108DP-T1-RE3 Vishay Siliconix MOSFET N-CHAN 100V POWERPAK SO-8 390

More on Order

URL Link

SIR108DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12.4A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2060pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 65.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8