Top

SIJ470DP-T1-GE3 Datasheet

SIJ470DP-T1-GE3 Cover
DatasheetSIJ470DP-T1-GE3
File Size168.08 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIJ470DP-T1-GE3
Description MOSFET N-CH 100V 58.8A PPAK SO-8

SIJ470DP-T1-GE3 - Vishay Siliconix

SIJ470DP-T1-GE3 Datasheet Page 1
SIJ470DP-T1-GE3 Datasheet Page 2
SIJ470DP-T1-GE3 Datasheet Page 3
SIJ470DP-T1-GE3 Datasheet Page 4
SIJ470DP-T1-GE3 Datasheet Page 5
SIJ470DP-T1-GE3 Datasheet Page 6
SIJ470DP-T1-GE3 Datasheet Page 7
SIJ470DP-T1-GE3 Datasheet Page 8
SIJ470DP-T1-GE3 Datasheet Page 9
SIJ470DP-T1-GE3 Datasheet Page 10

The Products You May Be Interested In

SIJ470DP-T1-GE3 SIJ470DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 58.8A PPAK SO-8 294

More on Order

URL Link

SIJ470DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

58.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 56.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8