Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHJ6N65E-T1-GE3 |
| File Size | 211.38 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHJ6N65E-T1-GE3 |
| Description | MOSFET N-CH 650V POWERPAK SO-8L |
SIHJ6N65E-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHJ6N65E-T1-GE3 | Vishay Siliconix | MOSFET N-CH 650V POWERPAK SO-8L | 3669 More on Order |
URL Link
www.zouser.com/datasheet/SIHJ6N65E-T1-GE3
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 868mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 596pF @ 100V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |