Top

SIHJ10N60E-T1-GE3 Datasheet

SIHJ10N60E-T1-GE3 Cover
DatasheetSIHJ10N60E-T1-GE3
File Size182.44 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHJ10N60E-T1-GE3
Description MOSFET N-CH 600V 10A POWERPAKSO

SIHJ10N60E-T1-GE3 - Vishay Siliconix

SIHJ10N60E-T1-GE3 Datasheet Page 1
SIHJ10N60E-T1-GE3 Datasheet Page 2
SIHJ10N60E-T1-GE3 Datasheet Page 3
SIHJ10N60E-T1-GE3 Datasheet Page 4
SIHJ10N60E-T1-GE3 Datasheet Page 5
SIHJ10N60E-T1-GE3 Datasheet Page 6
SIHJ10N60E-T1-GE3 Datasheet Page 7
SIHJ10N60E-T1-GE3 Datasheet Page 8
SIHJ10N60E-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 Vishay Siliconix MOSFET N-CH 600V 10A POWERPAKSO 2922

More on Order

URL Link

SIHJ10N60E-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

784pF @ 100V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

8-PowerTDFN